技术参数

• Package / Case TO-247-3
• Mounting Type Through Hole
• Operating Temperature -55°C ~ 175°C (TJ)
• Technology SiC (Silicon Carbide Junction Transistor)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 10A (Tc)
• Rds On (Max) @ Id, Vgs 330mOhm @ 5A, 20V
• Power Dissipation (Max) 97W (Tc)
• Vgs(th) (Max) @ Id 3V @ 1mA
• Supplier Device Package TO-247AB
• Drive Voltage (Max Rds On, Min Rds On) 16V, 20V
• Vgs (Max) +22V, -5V
• Drain to Source Voltage (Vdss) 1200 V
• Gate Charge (Qg) (Max) @ Vgs 26 nC @ 18 V
• Input Capacitance (Ciss) (Max) @ Vds 357 pF @ 1000 V
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant