- 产品型号 ECH8619-TL-E
- 品牌 Sanyo Semiconductor/onsemi
- RoHS No
- 描述 MOSFET N/P-CH 60V 3A/2A 8ECH
- 分类 FET、MOSFET 阵列
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- 库存 0
技术参数
- Package / Case 8-SMD, Flat Lead
- Mounting Type Surface Mount
- Configuration N and P-Channel
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- Power - Max 1.5W
- Drain to Source Voltage (Vdss) 60V
- Current - Continuous Drain (Id) @ 25°C 3A, 2A
- Input Capacitance (Ciss) (Max) @ Vds 560pF @ 20V
- Rds On (Max) @ Id, Vgs 93mOhm @ 1.5A, 10V
- Gate Charge (Qg) (Max) @ Vgs 12.8nC @ 10V
- FET Feature Logic Level Gate
- Supplier Device Package 8-ECH
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected


