技术参数

• Package / Case 8-PowerVDFN
• Mounting Type Surface Mount
• Configuration 2 N-Channel
• Operating Temperature 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 2W (Ta), 14W (Tc)
• Drain to Source Voltage (Vdss) 60V
• Current - Continuous Drain (Id) @ 25°C 6.5A (Ta), 15A (Tc)
• Input Capacitance (Ciss) (Max) @ Vds 460pF @ 30V
• Rds On (Max) @ Id, Vgs 29mOhm @ 6.5A, 10V
• Gate Charge (Qg) (Max) @ Vgs 7.6nC @ 10V
• Vgs(th) (Max) @ Id 2.5V @ 1mA
• Supplier Device Package 8-HSMT (3.2x3)
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)