技术参数

• Package / Case 8-SOIC (0.173", 4.40mm Width)
• Mounting Type Surface Mount
• Operating Temperature 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 12A (Ta)
• Rds On (Max) @ Id, Vgs 11.4mOhm @ 6A, 10V
• Vgs(th) (Max) @ Id 2.5V @ 1mA
• Supplier Device Package 8-SOP (5.5x6.0)
• Drain to Source Voltage (Vdss) 30 V
• Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 2150 pF @ 10 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)