技术参数

• Package / Case TO-252-5, DPAK (4 Leads + Tab), TO-252AD
• Mounting Type Surface Mount
• Configuration N and P-Channel, Common Drain
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 1.3W
• Drain to Source Voltage (Vdss) 80V
• Current - Continuous Drain (Id) @ 25°C 4.3A, 2.8A
• Input Capacitance (Ciss) (Max) @ Vds 800pF @ 40V
• Rds On (Max) @ Id, Vgs 80mOhm @ 4.3A, 10V
• Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V
• FET Feature Logic Level Gate
• Vgs(th) (Max) @ Id 4V @ 250µA
• Supplier Device Package TO-252 (DPAK)
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant