技术参数

• Package / Case TO-261-4, TO-261AA
• Mounting Type Surface Mount
• Transistor Type PNP
• Operating Temperature 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
• Current - Collector Cutoff (Max) 50nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1A, 5V
• Frequency - Transition 30MHz
• Supplier Device Package SOT-223
• Current - Collector (Ic) (Max) 4 A
• Voltage - Collector Emitter Breakdown (Max) 140 V
• Power - Max 800 mW
• ECCN EAR99
• HTSUS 8541.21.0095
• REACH Status REACH Unaffected