技术参数

• Package / Case 10-SIP
• Mounting Type Through Hole
• Configuration 4 N-Channel
• Operating Temperature 150°C
• Technology MOSFET (Metal Oxide)
• Power - Max 4W (Ta), 20W (Tc)
• Drain to Source Voltage (Vdss) 120V
• Current - Continuous Drain (Id) @ 25°C 6A (Ta)
• Input Capacitance (Ciss) (Max) @ Vds 400pF @ 10V
• Rds On (Max) @ Id, Vgs 200mOhm @ 4A, 10V
• Vgs(th) (Max) @ Id 2V @ 250µA
• Supplier Device Package 10-SIP
• ECCN EAR99
• HTSUS 8541.29.0095
• RoHS Status RoHS Compliant