技术参数

• Package / Case 12-SIP
• Mounting Type Through Hole
• Configuration 4 N-Channel
• Operating Temperature 150°C
• Technology MOSFET (Metal Oxide)
• Power - Max 4W (Ta), 35W (Tc)
• Drain to Source Voltage (Vdss) 450V
• Current - Continuous Drain (Id) @ 25°C 7A (Ta)
• Input Capacitance (Ciss) (Max) @ Vds 720pF @ 10V
• Rds On (Max) @ Id, Vgs 1.1Ohm @ 3.5A, 10V
• Vgs(th) (Max) @ Id 4V @ 1mA
• Supplier Device Package 12-SIP
• ECCN EAR99
• HTSUS 8541.29.0095
• RoHS Status RoHS Compliant