技术参数

• Package / Case 8-PowerTDFN
• Mounting Type Surface Mount
• Configuration 2 P-Channel
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 4.7W (Ta)
• Drain to Source Voltage (Vdss) 30V
• Current - Continuous Drain (Id) @ 25°C 10A (Ta), 39A (Tc)
• Input Capacitance (Ciss) (Max) @ Vds 1799pF @ 15V
• Rds On (Max) @ Id, Vgs 18mOhm @ 8A, 10V
• Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V
• Vgs(th) (Max) @ Id 2.5V @ 250µA
• Supplier Device Package PowerDI5060-8 (Type UXD)
• ECCN EAR99
• HTSUS 8541.29.0095
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant