技术参数

• Package / Case 6-UDFN Exposed Pad
• Mounting Type Surface Mount
• Configuration N and P-Channel Complementary
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 800mW
• Drain to Source Voltage (Vdss) 30V
• Current - Continuous Drain (Id) @ 25°C 5.3A (Ta), 3.4A (Ta)
• Input Capacitance (Ciss) (Max) @ Vds 500pF @ 15V, 336pF @ 25V
• Rds On (Max) @ Id, Vgs 30mOhm @ 5.8A, 10V, 70mOhm @ 3.8A, 10V
• Gate Charge (Qg) (Max) @ Vgs 10.6nC @ 10V, 7.8nC @ 10V
• Vgs(th) (Max) @ Id 2V @ 250µA, 2.1V @ 250µA
• Supplier Device Package U-DFN2020-6 (Type B)
• ECCN EAR99
• HTSUS 8541.21.0095
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant