技术参数

• Package / Case 8-PowerWDFN
• Mounting Type Surface Mount
• Configuration 2 N-Channel (Dual)
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 960mW (Ta), 27W (Tc), 1W (Ta), 44W (Tc)
• Drain to Source Voltage (Vdss) 25V
• Current - Continuous Drain (Id) @ 25°C 14A (Ta), 75A (Tc), 27A (Ta), 178A (Tc)
• Input Capacitance (Ciss) (Max) @ Vds 1080pF @ 12V, 4265pF @ 12V
• Rds On (Max) @ Id, Vgs 3mOhm @ 20A, 10V, 870µOhm @ 37A, 10V
• Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V, 59nC @ 10V
• Vgs(th) (Max) @ Id 2.1V @ 240µA, 2.1V @ 850µA
• Supplier Device Package 8-PQFN (5x6)
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant