技术参数

• Package / Case 8-SOIC (0.154", 3.90mm Width)
• Mounting Type Surface Mount
• Configuration 2 N-Channel (Dual)
• Operating Temperature 150°C
• Technology MOSFET (Metal Oxide)
• Power - Max 1.5W (Ta)
• Drain to Source Voltage (Vdss) 60V
• Current - Continuous Drain (Id) @ 25°C 3.8A
• Input Capacitance (Ciss) (Max) @ Vds 640pF @ 10V
• Rds On (Max) @ Id, Vgs 57mOhm @ 1.9A, 10V
• Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
• Vgs(th) (Max) @ Id 2.3V @ 100µA
• Supplier Device Package 8-SOP
• ECCN EAR99
• HTSUS 8541.29.0095