技术参数

• Package / Case 9-PowerTDFN
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 175°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 15.6A (Ta), 99A (Tc)
• Rds On (Max) @ Id, Vgs 4.6mOhm @ 20A, 10V
• Power Dissipation (Max) 2.5W (Ta), 100W (Tc)
• Vgs(th) (Max) @ Id 2.3V @ 47µA
• Supplier Device Package PG-TTFN-9-3
• Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 80 V
• Gate Charge (Qg) (Max) @ Vgs 38 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 3250 pF @ 40 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant