技术参数

• Package / Case Module
• Mounting Type Chassis Mount
• Configuration 2 N-Channel (Dual) Common Source
• Operating Temperature -55°C ~ 175°C (TJ)
• Technology Silicon Carbide (SiC)
• Power - Max 310W
• Drain to Source Voltage (Vdss) 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C 79A
• Input Capacitance (Ciss) (Max) @ Vds 3020pF @ 1000V
• Rds On (Max) @ Id, Vgs 31mOhm @ 40A, 20V
• Gate Charge (Qg) (Max) @ Vgs 232nC @ 20V
• Vgs(th) (Max) @ Id 2.8V @ 3mA
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant