技术参数

• Package / Case 8-SOIC (0.154", 3.90mm Width)
• Mounting Type Surface Mount
• Configuration 2 N-Channel (Half Bridge)
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 3.3W, 3.5W
• Drain to Source Voltage (Vdss) 30V
• Current - Continuous Drain (Id) @ 25°C 10.7A, 11.3A
• Input Capacitance (Ciss) (Max) @ Vds 946pF @ 15V
• Rds On (Max) @ Id, Vgs 16mOhm @ 8A, 10V
• Gate Charge (Qg) (Max) @ Vgs 27nC @ 10V
• Vgs(th) (Max) @ Id 3V @ 250µA
• Supplier Device Package 8-SOIC
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant