技术参数

• Package / Case 6-UFDFN Exposed Pad
• Mounting Type Surface Mount
• Configuration 2 N-Channel (Dual) Common Drain
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 810mW (Ta)
• Drain to Source Voltage (Vdss) 20V
• Current - Continuous Drain (Id) @ 25°C 7.5A (Ta), 21A (Tc)
• Input Capacitance (Ciss) (Max) @ Vds 647pF @ 10V
• Rds On (Max) @ Id, Vgs 20.2mOhm @ 6.5A, 4.5V
• Gate Charge (Qg) (Max) @ Vgs 14.8nC @ 10V
• Vgs(th) (Max) @ Id 950mV @ 250µA
• Supplier Device Package U-DFN2030-6 (Type B)
• ECCN EAR99
• HTSUS 8541.29.0095
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant