- 产品型号 NXH200T120H3Q2F2STG
- 品牌 Sanyo Semiconductor/onsemi
- RoHS Yes
- 描述 80KW GEN-II Q2PACK-200A MODULE (
- 分类 IGBT模块
-
PDF
- 库存 1500
技术参数
- Package / Case Module
- Mounting Type Chassis Mount
- Input Standard
- Configuration Half Bridge
- Operating Temperature -40°C ~ 175°C (TJ)
- Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 200A
- NTC Thermistor No
- Supplier Device Package 56-PIM/Q2PACK (93x47)
- IGBT Type Trench Field Stop
- Current - Collector (Ic) (Max) 330 A
- Voltage - Collector Emitter Breakdown (Max) 1200 V
- Power - Max 679 W
- Current - Collector Cutoff (Max) 500 µA
- Input Capacitance (Cies) @ Vce 35.615 nF @ 25 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) Not Applicable
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant


