技术参数

• Package / Case Die
• Mounting Type Surface Mount
• Operating Temperature -40°C ~ 150°C (TJ)
• Technology GaNFET (Gallium Nitride)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 9.4A (Ta)
• Rds On (Max) @ Id, Vgs 10.5mOhm @ 10A, 5V
• Vgs(th) (Max) @ Id 2.5V @ 3mA
• Supplier Device Package Die
• Drive Voltage (Max Rds On, Min Rds On) 5V
• Vgs (Max) +6V, -4V
• Drain to Source Voltage (Vdss) 100 V
• Gate Charge (Qg) (Max) @ Vgs 5.5 nC @ 5 V
• Input Capacitance (Ciss) (Max) @ Vds 664 pF @ 50 V
• ECCN EAR99
• HTSUS 8541.29.0040
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant