技术参数

• Package / Case ISOPLUS220™
• Mounting Type Through Hole
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 5A (Tc)
• Supplier Device Package ISOPLUS220™
• Drain to Source Voltage (Vdss) 800 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected