技术参数

• Package / Case 8-PowerTDFN
• Mounting Type Surface Mount
• Configuration 2 N-Channel (Dual)
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 1.09W (Ta), 1.15W (Ta)
• Drain to Source Voltage (Vdss) 30V
• Current - Continuous Drain (Id) @ 25°C 9.1A (Ta), 13.7A (Ta)
• Input Capacitance (Ciss) (Max) @ Vds 970pF @ 15V, 1950pF @ 15V
• Rds On (Max) @ Id, Vgs 7.3mOhm @ 10A, 10V, 3.4mOhm @ 20A, 10V
• Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V, 29nC @ 10V
• Vgs(th) (Max) @ Id 2.1V @ 250µA
• Supplier Device Package 8-DFN (5x6) Dual Flag (SO8FL-Dual-Asymmetrical)
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH info available upon request
• RoHS Status ROHS3 Compliant