技术参数

• Package / Case 8-PowerWDFN
• Mounting Type Surface Mount
• Configuration 2 N-Channel (Dual) Asymmetrical
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 800mW (Ta), 900mW (Ta)
• Drain to Source Voltage (Vdss) 25V
• Current - Continuous Drain (Id) @ 25°C 13A (Ta), 20A (Tc), 27A (Ta), 60A (Tc)
• Input Capacitance (Ciss) (Max) @ Vds 1240pF @ 13V, 4335pF @ 13V
• Rds On (Max) @ Id, Vgs 6mOhm @ 13A, 10V, 1.8mOhm @ 27A, 10V
• Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V, 64nC @ 10V
• Vgs(th) (Max) @ Id 2.2V @ 250µA, 2.2V @ 1mA
• Supplier Device Package Powerclip-33
• ECCN EAR99
• HTSUS 8541.21.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant