技术参数

• Package / Case 8-PowerWDFN
• Mounting Type Surface Mount
• Configuration N and P-Channel
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 1.9W (Ta), 14W (Tc), 1.9W (Ta), 10W (Tc)
• Drain to Source Voltage (Vdss) 100V
• Current - Continuous Drain (Id) @ 25°C 3.5A (Ta), 9.5A (Tc), 2.2A (Ta), 5A (Tc)
• Input Capacitance (Ciss) (Max) @ Vds 252pF @ 50V, 256pF @ 50V
• Rds On (Max) @ Id, Vgs 70mOhm @ 1.3A, 10V, 186mOhm @ 2.2A, 10V
• Gate Charge (Qg) (Max) @ Vgs 5.6nC @ 10V, 7.3nC @ 10V
• Vgs(th) (Max) @ Id 3V @ 24µA, 4V @ 40µA
• Supplier Device Package 8-WDFN (3x3)
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant