技术参数

• Package / Case 8-PowerTDFN
• Mounting Type Surface Mount
• Configuration N and P-Channel Complementary
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 1.7W (Ta), 21W (Tc)
• Drain to Source Voltage (Vdss) 30V
• Current - Continuous Drain (Id) @ 25°C 7A (Ta), 25A (Tc), 6.1A (Ta), 22A (Tc)
• Input Capacitance (Ciss) (Max) @ Vds 429pF @ 25V, 846pF @ 15V
• Rds On (Max) @ Id, Vgs 19mOhm @ 8A, 10V, 30mOhm @ 4A, 10V
• Gate Charge (Qg) (Max) @ Vgs 4.8nC @ 4.5V, 7.8nC @ 4.5V
• Vgs(th) (Max) @ Id 2.5V @ 250µA
• Supplier Device Package DFN5060B-8
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant