技术参数

• Package / Case 8-PowerWDFN
• Mounting Type Surface Mount
• Configuration N and P-Channel Complementary
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 2W (Ta), 17.8W (Tc)
• Drain to Source Voltage (Vdss) 30V
• Current - Continuous Drain (Id) @ 25°C 6.4A (Ta), 18.5A (Tc), 6.4A (Ta), 18A (Tc)
• Input Capacitance (Ciss) (Max) @ Vds 343pF @ 15V, 870pF @ 15V
• Rds On (Max) @ Id, Vgs 28mOhm @ 6A, 10V, 31mOhm @ 4A, 10V
• Gate Charge (Qg) (Max) @ Vgs 7.8nC @ 10V
• Vgs(th) (Max) @ Id 2.1V @ 250µA, 2.5V @ 250µA
• Supplier Device Package DFN3030B-8
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant