- 产品型号 F3L8MR12W2M1HPB11BPSA1
- 品牌 IR (Infineon Technologies)
- RoHS Yes
- 描述 SIC 2N-CH 1200V 85A AG-EASY2B
- 分类 FET、MOSFET 阵列
-
PDF
- 库存 45
技术参数
- Package / Case Module
- Mounting Type Chassis Mount
- Configuration 2 N-Channel (Half Bridge)
- Operating Temperature -40°C ~ 175°C (TJ)
- Technology Silicon Carbide (SiC)
- Drain to Source Voltage (Vdss) 1200V (1.2kV)
- Current - Continuous Drain (Id) @ 25°C 85A (Tj)
- Input Capacitance (Ciss) (Max) @ Vds 8800pF @ 800V
- Rds On (Max) @ Id, Vgs 12mOhm @ 100A, 18V
- Gate Charge (Qg) (Max) @ Vgs 297nC @ 18V
- Vgs(th) (Max) @ Id 5.15V @ 40mA
- Supplier Device Package AG-EASY2B
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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