- 产品型号 SSM3J66MFV,L3XHF
- 品牌 Toshiba Electronic Devices and Storage Corporation
- RoHS No
- 描述 AUTO AEC-Q SS MOS P-CH LOW VOLTA
- 分类 单 FET、MOSFET
-
PDF
- 库存 14407
技术参数
- Package / Case SOT-723
- Mounting Type Surface Mount
- Operating Temperature 150°C
- Technology MOSFET (Metal Oxide)
- FET Type P-Channel
- Current - Continuous Drain (Id) @ 25°C 800mA (Ta)
- Rds On (Max) @ Id, Vgs 390mOhm @ 800mA, 4.5V
- Power Dissipation (Max) 150mW (Ta)
- Vgs(th) (Max) @ Id 1V @ 1mA
- Supplier Device Package VESM
- Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
- Vgs (Max) +6V, -8V
- Drain to Source Voltage (Vdss) 20 V
- Gate Charge (Qg) (Max) @ Vgs 1.6 nC @ 4.5 V
- Input Capacitance (Ciss) (Max) @ Vds 100 pF @ 10 V
- ECCN EAR99
- HTSUS 8541.21.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected


