- 产品型号 A3G26H200W17SR3
- 品牌 NXP Semiconductors
- RoHS Yes
- 描述 RF MOSFET GAN 48V NI780
- 分类 RF FET、MOSFET
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技术参数
- Package / Case NI-780S-4S2S
- Frequency 2.496GHz ~ 2.69GHz
- Power - Output 34W
- Gain 14.2dB
- Technology GaN
- Supplier Device Package NI-780S-4S2S
- Voltage - Rated 125 V
- Voltage - Test 48 V
- Current - Test 120 mA
- ECCN EAR99
- HTSUS 8541.29.0075
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant


