技术参数

• Package / Case 8-PowerTDFN
• Mounting Type Surface Mount
• Operating Temperature 150°C
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 136A (Tc)
• Rds On (Max) @ Id, Vgs 2.3mOhm @ 50A, 10V
• Power Dissipation (Max) 800mW (Ta), 170W (Tc)
• Vgs(th) (Max) @ Id 4V @ 1mA
• Supplier Device Package 8-SOP Advance (5x5.75)
• Drive Voltage (Max Rds On, Min Rds On) 6.5V, 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 60 V
• Gate Charge (Qg) (Max) @ Vgs 72 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 6100 pF @ 30 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)