技术参数
- Technology GaNFET (Gallium Nitride)
- FET Type N-Channel
- Vgs (Max) +6V, -4V
- Drain to Source Voltage (Vdss) 40 V
- ECCN EAR99
- HTSUS 8541.29.0040
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
相关产品
GANFET NCH 40V 60A DIE
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GANFET N-CH 100V 16A DIE
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