技术参数

• Package / Case TO-236-3, SC-59, SOT-23-3
• Mounting Type Surface Mount
• Transistor Type NPN - Pre-Biased
• Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
• Current - Collector Cutoff (Max) 500nA
• DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 50mA, 5V
• Supplier Device Package SOT23-3 (TO-236)
• Current - Collector (Ic) (Max) 500 mA
• Voltage - Collector Emitter Breakdown (Max) 50 V
• Power - Max 250 mW
• Resistor - Base (R1) 2.2 kOhms
• Resistor - Emitter Base (R2) 10 kOhms
• HTSUS 0000.00.0000