技术参数

• Package / Case 8-VDFN Exposed Pad
• Mounting Type Surface Mount
• Operating Temperature 150°C
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 23A (Ta)
• Rds On (Max) @ Id, Vgs 7.8mOhm @ 11.5A, 10V
• Power Dissipation (Max) 700mW (Ta), 30W (Tc)
• Vgs(th) (Max) @ Id 2V @ 500µA
• Supplier Device Package 8-TSON Advance (3.3x3.3)
• Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
• Vgs (Max) +20V, -25V
• Drain to Source Voltage (Vdss) 30 V
• Gate Charge (Qg) (Max) @ Vgs 76 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 3240 pF @ 10 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)