技术参数

• Package / Case TO-251-3 Short Leads, IPAK, TO-251AA
• Mounting Type Through Hole
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 4.8A (Tc)
• Rds On (Max) @ Id, Vgs 800mOhm @ 2.9A, 10V
• Vgs(th) (Max) @ Id 4V @ 250µA
• Supplier Device Package TO-251AA
• Drain to Source Voltage (Vdss) 200 V
• Gate Charge (Qg) (Max) @ Vgs 14 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 260 pF @ 25 V
• ECCN EAR99
• HTSUS 0000.00.0000
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status Vendor Undefined
• RoHS Status RoHS non-compliant