技术参数

• Package / Case 3-SIP
• Mounting Type Through Hole
• Transistor Type NPN
• Gain 25dB
• Power - Max 150mW
• Current - Collector (Ic) (Max) 30mA
• Voltage - Collector Emitter Breakdown (Max) 20V
• DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 1mA, 6V
• Frequency - Transition 320MHz
• Noise Figure (dB Typ @ f) 3dB @ 100MHz
• Supplier Device Package 3-SPA
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status Vendor Undefined
• RoHS Status Not applicable