技术参数

• Package / Case 8-WDFN Exposed Pad
• Mounting Type Surface Mount
• Configuration 2 N-Channel (Half Bridge)
• Operating Temperature 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 8W, 10W
• Drain to Source Voltage (Vdss) 25V
• Current - Continuous Drain (Id) @ 25°C 14A, 16A
• Input Capacitance (Ciss) (Max) @ Vds 810pF @ 10V
• Rds On (Max) @ Id, Vgs 9.2mOhm @ 7A, 10V
• Gate Charge (Qg) (Max) @ Vgs 6.2nC @ 4.5V
• FET Feature Logic Level Gate, 4.5V Drive
• Supplier Device Package 8-DFN (5x6)
• ECCN EAR99
• HTSUS 0000.00.0000
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status Vendor Undefined
• RoHS Status Not applicable