技术参数

• Package / Case PowerPAK® 1212-8SCD
• Mounting Type Surface Mount
• Configuration 2 N-Channel (Dual) Common Drain
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 5.2W (Ta), 69.4W (Tc)
• Drain to Source Voltage (Vdss) 30V
• Current - Continuous Drain (Id) @ 25°C 28A (Ta), 101A (Tc)
• Input Capacitance (Ciss) (Max) @ Vds 2050pF @ 15V
• Rds On (Max) @ Id, Vgs 4.5mOhm @ 7A, 10V
• Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
• Vgs(th) (Max) @ Id 2.3V @ 250µA
• Supplier Device Package PowerPAK® 1212-8SCD
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status Vendor Undefined