- 产品型号 TK200F04N1L,LXGQ
- 品牌 Toshiba Electronic Devices and Storage Corporation
- RoHS No
- 描述 MOSFET N-CH 40V 200A TO220SM
- 分类 单 FET、MOSFET
- 库存 940
技术参数
- Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Mounting Type Surface Mount
- Operating Temperature 175°C
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 200A (Ta)
- Rds On (Max) @ Id, Vgs 0.9mOhm @ 100A, 10V
- Power Dissipation (Max) 375W (Tc)
- Vgs(th) (Max) @ Id 3V @ 1mA
- Supplier Device Package TO-220SM(W)
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 40 V
- Gate Charge (Qg) (Max) @ Vgs 214 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 14920 pF @ 10 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 3 (168 Hours)


