技术参数

• Package / Case 8-PowerVDFN
• Mounting Type Surface Mount
• Operating Temperature 175°C
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 40A (Ta)
• Rds On (Max) @ Id, Vgs 9.6mOhm @ 20A, 10V
• Power Dissipation (Max) 840mW (Ta), 100W (Tc)
• Vgs(th) (Max) @ Id 2.1V @ 500µA
• Supplier Device Package 8-TSON Advance-WF (3.1x3.1)
• Grade Automotive
• Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
• Vgs (Max) +10V, -20V
• Drain to Source Voltage (Vdss) 40 V
• Gate Charge (Qg) (Max) @ Vgs 64 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 10 V
• Qualification AEC-Q101
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)