技术参数

• Package / Case Module
• Mounting Type Chassis Mount
• Configuration 2 N Channel (Phase Leg)
• Operating Temperature -40°C ~ 175°C (TJ)
• Technology Silicon Carbide (SiC)
• Power - Max 3200W (Tc)
• Drain to Source Voltage (Vdss) 1200V (1.2kV)
• Current - Continuous Drain (Id) @ 25°C 742A (Tc)
• Input Capacitance (Ciss) (Max) @ Vds 33500pF @ 1000V
• Rds On (Max) @ Id, Vgs 2.85mOhm @ 600A, 20V
• Gate Charge (Qg) (Max) @ Vgs 1932nC @ 20V
• Vgs(th) (Max) @ Id 4V @ 180mA
• Supplier Device Package SP6C LI
• ECCN EAR99
• HTSUS 8541.29.0095
• REACH Status REACH Unaffected