技术参数

• Package / Case 4-SMD (35 micro-X)
• Mounting Type Surface Mount
• Transistor Type NPN
• Operating Temperature 150°C (TJ)
• Gain 10dB ~ 18.5dB
• Power - Max 500mW
• Current - Collector (Ic) (Max) 60mA
• Voltage - Collector Emitter Breakdown (Max) 12V
• DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA, 8V
• Frequency - Transition 8GHz
• Noise Figure (dB Typ @ f) 1.3dB ~ 3dB @ 1GHz ~ 4GHz
• Supplier Device Package 35 micro-X
• ECCN EAR99
• HTSUS 8541.21.0040
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected