技术参数

• Package / Case 3-UFDFN
• Mounting Type Surface Mount
• Transistor Type NPN - Pre-Biased
• Vce Saturation (Max) @ Ib, Ic 200mV @ 5mA, 50mA
• Current - Collector Cutoff (Max) 500nA
• DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 50mA, 5V
• Supplier Device Package X1-DFN1006-3
• Current - Collector (Ic) (Max) 100 mA
• Voltage - Collector Emitter Breakdown (Max) 50 V
• Power - Max 250 mW
• Frequency - Transition 250 MHz
• Resistor - Base (R1) 4.7 kOhms
• Resistor - Emitter Base (R2) 47 kOhms
• ECCN EAR99
• HTSUS 8541.21.0075
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant