- 产品型号 TK1R4S04PB,LXHQ
- 品牌 Toshiba Electronic Devices and Storage Corporation
- RoHS No
- 描述 MOSFET N-CH 40V 120A DPAK
- 分类 单 FET、MOSFET
-
PDF
- 库存 2867
技术参数
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Mounting Type Surface Mount
- Operating Temperature 175°C
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 120A (Ta)
- Rds On (Max) @ Id, Vgs 1.9mOhm @ 60A, 6V
- Power Dissipation (Max) 180W (Tc)
- Vgs(th) (Max) @ Id 3V @ 500µA
- Supplier Device Package DPAK+
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 40 V
- Gate Charge (Qg) (Max) @ Vgs 103 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 5500 pF @ 10 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)


