技术参数

• Package / Case TO-205AF Metal Can
• Mounting Type Through Hole
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 3.5A (Tc)
• Power Dissipation (Max) 20W
• Supplier Device Package TO-205AF (TO-39)
• Drain to Source Voltage (Vdss) 100 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status Vendor Undefined
• RoHS Status RoHS non-compliant