技术参数

• Package / Case 3-SSIP
• Mounting Type Through Hole
• Transistor Type NPN - Pre-Biased
• Supplier Device Package 3-SPA
• Voltage - Collector Emitter Breakdown (Max) 50 V
• Power - Max 200 mW
• ECCN EAR99
• HTSUS 8541.21.0075
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status Vendor Undefined
• RoHS Status Not applicable