技术参数

• Package / Case 8-SOIC (0.173", 4.40mm Width)
• Mounting Type Surface Mount
• Configuration N and P-Channel
• Operating Temperature 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• Power - Max 1.8W
• Drain to Source Voltage (Vdss) 30V
• Current - Continuous Drain (Id) @ 25°C 6A, 5A
• Input Capacitance (Ciss) (Max) @ Vds 850pF @ 10V
• Rds On (Max) @ Id, Vgs 33mOhm @ 6A, 10V
• Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
• FET Feature Logic Level Gate
• Supplier Device Package 8-SOP
• ECCN EAR99
• HTSUS 0000.00.0000
• RoHS Status Not applicable