技术参数

• Package / Case TO-220-3 Isolated Tab
• Mounting Type Through Hole
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 65A (Tc)
• Rds On (Max) @ Id, Vgs 5.7mOhm @ 40A, 10V
• Vgs(th) (Max) @ Id 2.5V @ 1mA
• Supplier Device Package TO-220-3
• Drain to Source Voltage (Vdss) 20 V
• Gate Charge (Qg) (Max) @ Vgs 32 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 10 V
• ECCN EAR99
• HTSUS 8541.29.0095
• RoHS Status ROHS3 Compliant