技术参数

• Package / Case Die
• Mounting Type Surface Mount
• Transistor Type PNP
• Operating Temperature -65°C ~ 150°C (TJ)
• Current - Collector (Ic) (Max) 400mA
• Voltage - Collector Emitter Breakdown (Max) 40V
• DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 50mA, 5V
• Frequency - Transition 500MHz
• Supplier Device Package Die
• ECCN OBSOLETE