技术参数

• Package / Case Die
• Mounting Type Surface Mount
• Transistor Type NPN
• Operating Temperature -65°C ~ 150°C (TJ)
• Gain 11.4dB
• Current - Collector (Ic) (Max) 400mA
• Voltage - Collector Emitter Breakdown (Max) 30V
• DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 50mA, 15V
• Frequency - Transition 2.4GHz
• Noise Figure (dB Typ @ f) 8dB @ 200MHz
• Supplier Device Package Die
• ECCN OBSOLETE