技术参数

• Package / Case 4-SMD, No Lead
• Mounting Type Surface Mount
• Transistor Type NPN
• Operating Temperature -65°C ~ 200°C (TJ)
• Gain 11dB
• Power - Max 1W
• Current - Collector (Ic) (Max) 400mA
• Voltage - Collector Emitter Breakdown (Max) 20V
• DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 50mA, 15V
• Frequency - Transition 1.2GHz
• Noise Figure (dB Typ @ f) 3.5dB @ 200MHz
• Supplier Device Package UB
• ECCN OBSOLETE