技术参数

• Package / Case TO-3P-3, SC-65-3
• Mounting Type Through Hole
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 11A (Tc)
• Rds On (Max) @ Id, Vgs 1.1Ohm @ 5.5A, 10V
• Power Dissipation (Max) 300W (Tc)
• Vgs(th) (Max) @ Id 5V @ 250µA
• Supplier Device Package TO-3P
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Vgs (Max) ±30V
• Drain to Source Voltage (Vdss) 900 V
• Gate Charge (Qg) (Max) @ Vgs 80 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 3290 pF @ 25 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected