- 产品型号 TK110P10PL,RQ
- 品牌 Toshiba Electronic Devices and Storage Corporation
- RoHS Yes
- 描述 X35 PB-F POWER MOSFET TRANSISTOR
- 分类 单 FET、MOSFET
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PDF
- 库存 1138
技术参数
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Mounting Type Surface Mount
- Operating Temperature 175°C
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 40A (Tc)
- Rds On (Max) @ Id, Vgs 10.6mOhm @ 20A, 10V
- Power Dissipation (Max) 75W (Tc)
- Vgs(th) (Max) @ Id 2.5V @ 300µA
- Supplier Device Package DPAK
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 100 V
- Gate Charge (Qg) (Max) @ Vgs 33 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 2040 pF @ 50 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- RoHS Status ROHS3 Compliant


